A Simulation Study on the Effect of the Thickness and Carrier Concentration of the Active Layers in the n-CdSe/p-CdSe Solar Cell

In this work, thin-film solar cells based on Cadmium Selenide (CdSe) film were used, due to the low manufacturing cost and superior electronic properties, type of cell also achieves appropriate efficiency. The current work will focus investigating effect thickness carrier concentration active layers in cell, window performance proposed using one-dimension capacitance simulation SCAPS-1D computer program. structure consists ITO/n-CdSe/p-CdSe/Pt, where ITO was used as a layer, n-CdSe buffer p-CdSe an absorber platinum Pt back conductive electrode. results revealed that performed best at thicknesses 5000 100nm for layers, respectively, with concentrations 1016 1017cm-3for same layers. optimal layer is 100nm. These variables yield open circuit voltage (VOC), short density (JSC), fill factor (FF) 1.0845 V, 20.87 mA/cm2, 88.02% while conversion efficiency (Eff.) obtained, which 19.92%.